Jpn J Appl Phys 2002, 41:528–532.CrossRef 5. Momose K, Staurosporine Yonezu H, Fujimoto Y, Furukawa Y, Motomura Y, Aiki K: Dislocation-free and lattice-matched Si/GaP 1-x N x /Si structure for photo-electronic integrated systems. Appl Phys Lett 2001, 79:4151–4153.CrossRef 6. Fujimoto Y, Yonezu H, Utsumi A, Momose K, Furukawa Y: Dislocation-free GaAs y P 1-x-y N x /GaP 0.98 N 0.02 quantum-well structure lattice matched to a Si substrate. Appl Phys Lett

2001, 79:1306–1308.CrossRef 7. Thinh NQ, Vorona IP, Buyanova IA, Chen JAK inhibitor WM, Limpijumnong S, Zhang SB, Hong YG, Xin HP, Tu CW, Utsumi A, Furukawa Y, Moon S, Wakahara A, Yonezu H: Properties of Ga-interstitial defects in Al x Ga 1− x N y P 1− y Phys Rev B 2005, 71:125209.CrossRef 8. Buyanova IA, Chen WM, Tu CW: Recombination processes in N-containing III–V ternary alloys. Solid State Electron 2003, 47:467–475.CrossRef 9. Duan X, Huang Y, Cui Y, Wang J, Lieber CM: Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 2001, 409:66–69.CrossRef 10. Gudiksen MS, Lauhon LJ, Wang J, Smith DC, Lieber CM: Growth of nanowire superlattice structures for nanoscale photonics

and electronics. Nature 2002, 15:617–620.CrossRef 11. Mårtensson T, Svensson CPT, Wacaser BA, Larsson MW, Seifert W, Deppert K, Gustafsson A, Wallenberg LR, Samuelson L: Epitaxial III−V nanowires on silicon. Nano Lett 2004, 4:1987–1990.CrossRef 12. Kuang YJ, Sukrittanon S, Li H, Tu CW: Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy. Appl Phys Lett 2012, 100:053108.CrossRef Trichostatin A research buy 13. Dobrovolsky A, Stehr JE, Chen SL, Kuang YJ, Sukrittanon S, Tu CW, Chen WM, Buyanova IA: Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires. Appl Phys Lett 2012, 101:163106.CrossRef 14. Dean PJ, Thomas DG, Frosch CJ: New isoelectronic

trap luminescence in gallium phosphide. J Phys C: Solid State Phys 1984, 17:747–762.CrossRef Mirabegron 15. Rudko GY, Buyanova IA, Chen WM, Xin HP, Tu CW: Temperature dependence of the GaNxP1−x band gap and effect of band crossover. Appl Phys Lett 2002, 81:2984–2987.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions AD carried out the experiments and analyzed the data with guidance from IAB and WMC. YK and SS performed the growth of the NWs with guidance from CWT. IAB wrote the final version of the manuscript with contributions from the co-authors. All authors read and approved the final manuscript.”
“Background Recently, hybrid composites have attracted large attention and have received increasing interest in various fields [1–4]. Researchers with different mixtures have been tried out, such as multi-walled carbon nanotubes (MWCNTs) with carbon black [1], few layer graphene with single-walled carbon nanotubes [2], and MWCNTs with graphene nanoplatelets (GnPs) [3]. Kumar et al.