It provides a simple way to produce large area, uniformly aligned nanorods with controlled porosity. During the OAD process, the vapor flux is deposited onto a substrate at a large angle α with respect to the substrate normal, and a well-aligned and separated nanorod arrays can be obtained due to the self-shadowing effect [11, 12], with growth orientation toward the vapor flux direction [13]. Moreover, the buy Ro-3306 porosity can be readily tuned by varying the oblique angle, and various substrates such as glass, F-doped SnO2 (FTO), Si, etc., could be deposited on. In this work, we report

a one-step method, i.e., by OAD method using electron beam evaporation for fabricating TiN HDAC inhibitor nanostructure with tunable morphologies and porosities. The TiN nanostructures are used as the electrodes for electrochemical sensing H2O2, exhibiting good performance. Methods Fabrication of TiN films by OAD The TiN NRAs were deposited on silicon and FTO substrates using OAD described elsewhere [14]. The substrates were sequentially cleaned in acetone and alcohol by ultrasonic washer and then rinsed in deionized water for 5 min each. The system was pumped down to a base

pressure of 2 × 10−5 Pa, and then the TiN films were deposited at a deposition rate of 0.5 nm s−1, which was PND-1186 clinical trial monitored by a quartz crystal microbalance. The deposition angle of TiN flux was set at ca. 0°, 60°, 70°, 80°, and 85° with respect to the substrate normal, respectively. The substrate temperature was maintained at ca. −20°C with liquid nitrogen. Characterizations The crystal structure

of the TiN films was characterized by X-ray diffraction (XRD Rigaku 2500, Shibuya-ku, Japan ), which was conducted from 20° to 60° at a scanning speed of 6° min−1, mafosfamide using Cu Kα radiation (λ = 0.15406 nm). The morphology was characterized with a field emission scanning electron microscopy (SEM JEOL-7001 F, Akishima-shi, Japan) working at 20 kV. The microstructures of the prepared samples were characterized in detail with a transmission electron microscope (TEM JEOL-2010 F). The refractive index (n e) of the TiN films deposited at various oblique angels was measured by spectroscopic ellipsometry (J.A. Woollam, Co., Inc., Lincoln, NE, USA). Electrochemical measurements were carried out in a 250-mL quartz cell connected to an electrochemistry workstation (CHI 660, Shanghai Chenhua Instrument, Shanghai, China). A three-electrode assembly was adopted for the test, with the TiN films as a working electrode, a Pt foil as a counter electrode, a saturated Ag/AgCl as a reference electrode, and phosphate buffer solution (PBS, pH 7.0) as the electrolyte. The current versus time was recorded at −0.2 V bias versus saturated Ag/AgCl. Results and discussion Figure 1 shows the typical growth morphology of the TiN films deposited at various deposition angles. In the same deposition time of 30 min, the thickness of film gradually decreases from 860 to 190 nm as the deposition angle increases from 0° to 85°.