(c) 2011 Wiley Periodicals, Inc J Appl Polym Sci 122: 257-264, 2

(c) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 122: 257-264, 2011″
“The aim of study was to investigate factors predicting persistence or relapse of disease after cervical conisation for high-grade squamous intraepithelial lesions (CIN 2 or 3).

The study involved 78 women with high-grade squamous intraepithelial lesions, conservatively treated with loop electroexcision selleck chemical procedure for cervical conisation and subsequent with CO(2) laser-vaporisation of the cervical bed. Histological specimens were totally included and examined by an experienced pathologist. To evaluate the efficacy of treatment, the patients were examined with colposcopy

and Pap smear 4 months after surgery and with PCR to

search for and genotyping of HPV, 10 months after treatment.

During the post-treatment follow-up, the cytologic examination showed persistent/relapsing disease in six patients (7.6%). In only 1 case, the deep margin of Selleck BMS-345541 the cone was considered positive for CIN (16%).Ten months after treatment, viral typing revealed the persistence of high-risk HPV in all of these patients. Conversely, the viral follow-up of the other 72 patients without persisting/relapsing disease after treatment disclosed low-risk HPV genotypes in 6 cases, high-risk HPV in 2 cases (2.7%), whereas 7 cases had positive margins for CIN (9.7%). The risk of persistence and relapse of CIN in the group with positive margins was not statistically significant (P = 0.87), whereas it was

in the group with HR-HPV positive (P = 0.000048).

HPV testing is the most sensitive mean of identifying persistence or relapse early and is therefore capable of optimising follow-up after the treatment of high-grade CIN.”
“We report the dramatic change of gapless semiconductor properties by different chemical doping elements of Co and Mn into PbPdO2. The metal-insulatorlike transition temperature T-MI = 100 K for PbPdO2 shifts to a higher temperature of 150 K by the Co doping see more and to a lower temperature of 70 K by the Mn doping. Because of the anisotropic band structure with the majority of heavy holes and the minority of light electrons, the transport and magnetic properties are significantly changed by the chemical doping elements. At low temperatures, the Co doping enhances ferromagnetic interactions, whereas the Mn doping favors antiferromagnetic interactions. These results are of great interests because you can control the magnetic ordering as well as manipulate the carrier density by changing the doping elements. These materials could be a good candidate for spintronics applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554218]“
“In this study, the dielectric properties and alternating-current (ac) conductivity of Au/(PVA/Ni,Zn acetates)/n-Si Schottky diodes (SDs) were determined by the measurement impedance technique.

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