20 nm (two times higher
than for annealed one). The behavior of the layer deposited on heated glass (shift of the threshold for electrically continuous layer) is similar to those as-sputtered and then thermally annealed . With further increase of the Au thickness, the pronounced decrease of R s is observed, with the minimum being achieved for the thicknesses above 35 nm both for annealed Au and Au deposited on heated substrate (see Figure 1). www.selleckchem.com/products/pf-03084014-pf-3084014.html Figure 1 Dependence of Au layer sheet resistance of evaporated samples deposited on selleck inhibitor glass at different temperatures. The dependence of Au layer sheet resistance on the layer thickness measured for evaporated samples deposited on glass at room temperature (RT), deposited on substrate heated to 300°C (300°C) and deposited on glass with room temperature and consequently annealed at 300°C (annealing). Free carrier
volume concentration significantly affects the electrical conductance of materials. The dependence of the free carrier concentration on the Au layer thickness is shown in Figure 2. With the formation of an electrically continuous Au layer, the carrier concentration increases dramatically. The thickness for the transition to formation of www.selleckchem.com/Androgen-Receptor.html electrically continuous layer is in a good correspondence with the measurement of R s (see Figures 1 and 2). The sharp increase of free carrier concentration is shifted for the Au layers prepared by evaporation onto the heated substrate (300°C) to 20 nm which is in accordance with the results in Figure 1. The increase of free carrier concentration was observed in the layer thickness of 10 nm for the annealed Au layers and slightly lower thickness for the Au evaporated by room temperature. This minor difference can be caused by the different morphologies of Au nanostructures influencing the transport of free carriers in Au nanolayers after annealing, which will be discussed in the next chapter. Figure 2 Dependence of free carrier volume concentration in Au layer deposited on glass at different temperatures. The dependence of free carrier volume concentration in Au layer Buspirone HCl on the layer thickness measured for
evaporated samples deposited on glass at RT, deposited on substrate heated to 300°C (300°C) and deposited on glass with room temperature and consequently annealed at 300°C (annealing). Surface morphology The morphology of evaporated Au nanolayers of different thicknesses and their structures consequently annealed to 300°C is introduced in Figure 3. The surface morphology of electrically discontinuous (7 nm), electrically continuous (18 nm), and electrically continuous layer with minimum sheet resistance (35 nm) was chosen for the analysis. As it is obvious from Figure 3, the consequent thermal annealing leads to the significant increase of the surface roughness both for electrically continuous and discontinuous evaporated nanolayers.