10 1002/adma 201303017CrossRef 4 Yoon SM, Warren SC, Grzybowski

10.1002/adma.201303017CrossRef 4. Yoon SM, Warren SC, Grzybowski BA: Storage of electrical information in metal–organic‒framework Emricasan mouse memristors. Angew Chem Int Ed 2014,53(17):4437–4441. 10.1002/anie.201309642CrossRef 5. Wang ZQ, Xu HY, Li XH, Yu H, Liu YC, Zhu XJ: Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv Funct Mater 2012,22(13):2759–2765. 10.1002/adfm.201103148CrossRef 6. Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams

RS: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nanotechnol 2008,3(7):429–433. 10.1038/nnano.2008.160CrossRef 7. Sawa A: Resistive switching in transition metal oxides. Mater Today 2008,11(6):28–36. 10.1016/S1369-7021(08)70119-6CrossRef 8. Zoolfakar AS, Kadir RA, Rani RA, Balendhran S, Liu X, Kats E, Bhargava SK, Bhaskaran M, Sriram S, Zhuiykov S, O’Mullane AP, Zadeh KK: Engineering electrodeposited ZnO films and their memristive switching performance. Phys Chem Chem Phys 2013,15(25):10376–10384. 10.1039/c3cp44451aCrossRef

9. Liu L, Chen B, Gao B, Zhang F, Chen Y, Liu X, Kang J: Engineering oxide resistive switching materials for memristive device application. Appl Phys A 2011,102(4):991–996. 10.1007/s00339-011-6331-2CrossRef 10. Ridhuan NS, Lockman Z, Aziz AA, Khairunisak AR: Properties of ZnO nanorods arrays growth via low temperature hydrothermal reaction. Adv Mater Res 2012, 364:422–426.CrossRef 11. Yao I, Tseng TY, Lin P: ZnO nanorods grown on polymer substrates as UV photodetectors. XAV-939 research buy Sensors Actuators A Phys 2012, 178:26–31.CrossRef 12. Rusli NI, Tanikawa M, Mahmood MR, Yasui K, Hashim AM: Growth of high-density zinc oxide nanorods on porous silicon by thermal evaporation. Materials 2012,5(12):2817–2832. 10.3390/ma5122817CrossRef 13. Cai F, Wang J, Yuan Z, Duan Y: Magnetic-field effect on dye-sensitized

ZnO nanorods-based solar cells. J Power Sources 2012, 216:269–272.CrossRef 14. Tao R, Tomita T, Wong RA, Waki K: Electrochemical and structural Evodiamine analysis of Al-doped ZnO nanorod arrays in dye-sensitized solar cells. J Power Sources 2012, 214:159–165.CrossRef 15. Aroutiounian V, Arakelyan V, Galstyan V, Martirosyan K, Soukiassian P: Hydrogen sensor made of porous silicon and covered by TiO or ZnO Al thin film. Sens J IEEE 2009,9(1):9–12.CrossRef 16. Prabakaran R, Peres M, Monteiro T, Fortunato E, Martins R, Ferreira I: The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices. J Non Cryst Solids 2008,354(19):2181–2185.CrossRef 17. Kumar Y, Garcia JE, Singh F, Olive-Méndez SF, Sivakumar VV, Kanjilal D, Agarwal V: Influence of mesoporous substrate morphology on the structural, optical and electrical properties of RF LY2835219 sputtered ZnO layer deposited over porous silicon nanostructure. Appl Surf Sci 2012,258(7):2283–2288. 10.1016/j.apsusc.2011.09.131CrossRef 18.

Comments are closed.